Three-Dimensional Propagation of the Transmitted Shock Wave in a Square Cross-Sectional Chamber

An investigation into the three-dimensional propagation of the transmitted shock wave in a square cross-section chamber was described in this paper, and the work was carried out numerically by solving the Euler equations with a dispersion-controlled scheme. Computational images were constructed from the density distribution of the transmitted shock wave discharging from the open end of the square shock tube and compared directly with holographic interferograms available for CFD validation. Two cases of the transmitted shock wave propagating at different Mach numbers in the same geometry were simulated. A special shock reflection system near the corner of the square cross-section chamber was observed, consisting of four shock waves: the transmitted shock wave, two reflection shock waves and a Mach stem. A contact surface may appear in the four-shock system when the transmitted shock wave becomes stronger. Both the secondary shock wave and the primary vortex loop are three-dimensional in the present case due to the non-uniform flow expansion behind the transmitted shock.

Topology of toroidal helical fields in non-circular cross-sectional tokamaks

The ordinary differential magnetic field line equations are solved numerically; the tokamak magnetic structure is studied on Hefei Tokamak-7 Upgrade (HT-7U) when the equilibrium field with a monotonic q-profile is perturbed by a helical magnetic field. We find that a single mode (m, n) helical perturbation can cause the formation of islands on rational surfaces with q = m/n and q = (m +/- 1, +/- 2, +/- 3,...)/n due to the toroidicity and plasma shape (i.e. elongation and triangularity), while there are many undestroyed magnetic surfaces called Kolmogorov-Arnold-Moser (KAM) barriers on irrational surfaces. The islands on the same rational surface do not have the same size. When the ratio between the perturbing magnetic field B-r(r) and the toroidal magnetic field amplitude B(phi)0 is large enough, the magnetic island chains on different rational surfaces will overlap and chaotic orbits appear in the overlapping area, and the magnetic field becomes stochastic. It is remarkable that the stochastic layer appears first in the plasma edge region.

Geometry parameter optimization of large cross-sectional S-shaped bent rib waveguides for silicon based optical switches

地址: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

Stability shear stress and equilibrium cross-sectional geometry of sheltered tidal channels

This study relates tidal channel cross-sectional area (A) to peak spring discharge (Q) via a physical mechanism, namely the stability shear stress ( tau sub(S)) just necessary to maintain a zero gradient in net along-channel sediment transport. It is assumed that if bed shear stress ( tau ) is greater than tau sub(S), net erosion will occur, increasing A, and reducing tau similar to (Q/A) super(2) back toward tau sub(S). If tau < tau sub(S) there will be net deposition, reducing A and increasing tau toward tau sub(S). A survey of the literature allows estimates of Q and A at 242 sections in 26 separate sheltered tidal systems. Assuming a single value of tau sub(S) characterizes the entire length of a given tidal channel, it is predicted that along-channel geometry will follow the relation Ah sub(R) super(1) super(/) super(6) similar to Q. Along-channel regressions of the form Ah sub(R) super(1) super(/) super(6) similar to Q super( beta ) give a mean observed value for beta of 1.00 plus or minus 0.06, which is consistent with this concept. Results indicate that a lower bound on tau sub(S) (and an upper bound on A) for stable channels is provided by the critical shear stress ( tau sub(C)) just capable of initiating sediment motion. Observed tau sub(S) is found to vary among all systems as a function of spring tidal range (R sub(sp)) according to the relation tau sub(S) approximately 2.3 R sub(sp) super(0.79) tau sub(C). Observed deviations from uniform tau sub(S) along individual channels are associated with along-channel variation in the direction of maximum discharge (i.e., flood-versus ebb-dominance).

THE OXIDATION-KINETICS OF THIN POLYCRYSTALLINE SILICON FILMS

The oxidation dynamics and morphology of undoped and heavily phosphorus-doped polycrystalline silicon films oxidized at a wide temperature and time range in dry and wet O2 atmosphere have been investigated. It is shown that the oxidation rates of polycrystalline silicon films are different from that of single-crystal silicon when the oxidation temperature is below 1000-degrees-C. There is a characteristic oxidation time, t(c), under which the undoped polysilicon oxide is not only thicker than that of (100)-oriented single-crystal silicon, but also thicker than that of (111)-oriented single-crystal silicon. For phosphorus-doped polycrystalline silicon films, the oxide thickness is thinner not only than that of (111)-oriented, single-crystal silicon, but also thinner than that of (100)-oriented, single-crystal silicon. According to TEM cross-sectional studies, these characteristics are due to the enhanced oxidation at grain boundaries of polycrystalline silicon films. A stress-enhanced oxidation model has been proposed and used to explain successfully the enhanced oxidation at grain boundaries of polycrystalline silicon films. Using this model, the oxidation linear rate constant of polysilicon (B/A)poly has been calculated and used in the modeling of the oxidation dynamics. The model results are in good agreement with the experimental data over the entire temperature and time ranges studied.